Lü, Hangbing: search on Z-Library

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1

A 0.75 V reference clamping sense amplifier for low-power high-density ReRAM with dynamic pre-charge technique

Yin, Jiahao, Dou, Chunmeng, Dong, Danian, Yu, Jie, Xu, Xiaoxin, Luo, Qing, Gong, Tiancheng, Tai, Lu, Yuan, Peng, Xue, Xiaoyong, Liu, Ming, Lv, Hangbing

Journal:

IEICE Electronics Express

Year:

2019

Language:

english

File:

PDF, 2.52 MB

english, 2019

2

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

Luo, Qing, Xu, Xiaoxin, Liu, Hongtao, Lv, Hangbing, Gong, Tiancheng, Long, Shibing, Liu, Qi, Sun, Haitao, Banerjee, Writam, Li, Ling, Gao, Jianfeng, Lu, Nianduan, Liu, Ming

Journal:

Year:

2016

Language:

english

File:

PDF, 18.99 MB

english, 2016

3

[IEEE 2019 Symposium on VLSI Technology - Kyoto, Japan (2019.6.9-2019.6.14)] 2019 Symposium on VLSI Technology - Nb 1-x O2 based Universal Selector with Ultra-high Endurance (>10 12 ), high speed (10ns) and Excellent V th Stability

Luo, Qing, Yu, Jie, Zhang, Xumeng, Xue, Kan-Hao, Yuan, Jun-Hui, Cheng, Yan, Gong, Tiancheng, Lv, Hangbing, Xu, Xiaoxin, Yuan, Peng, Yin, Jiahao, Tai, Lu, Long, Shibing, Liu, Qi, Miao, Xiangshui, Li, J

Year:

2019

Language:

english

File:

PDF, 1.67 MB

english, 2019

4

[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Uniformity and Endurance Enhancement of Valance Changed Resistive Switching Memory (VCM) by a New Pulse Method

Yu, Jie, Xu, Xiaoxin, Gong, Tiancheng, Luo, Qing, Tai, Lu, Li, Xiaoyan, Yuan, Peng, Dong, Danian, Yin, Jiahao, Ding, Qingting, Lv, Hangbing, Liu, Ming

Year:

2019

Language:

english

File:

PDF, 487 KB

english, 2019

5

Analysis of the contact resistance in amorphous InGaZnO thin film transistors

Wang, Wei, Li, Ling, Lu, Congyan, Liu, Yu, Lv, Hangbing, Xu, Guangwei, Ji, Zhuoyu, Liu, Ming

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 1.37 MB

english, 2015

6

Approaches for improving the performance of filament-type resistive switching memory

WenTai Lian, ShiBing Long, HangBing Lü, Qi Liu, YingTao Li, Sen Zhang, Yan Wang, ZongLiang Huo, YueHua Dai, JunNing Chen, Ming Liu

Journal:

Chinese Science Bulletin

Year:

2011

Language:

english

File:

PDF, 551 KB

english, 2011

7

Unveiling the Switching Mechanism of a TaOx/HfO2 Self-selective Cell by Probing the Trap Profiles with RTN Measurements

Gong, Tiancheng, Luo, Qing, Lv, Hangbing, Xu, Xiaoxin, Yu, Jie, Yuan, Peng, Dong, Danian, Chen, Chuanbing, Yin, Jiahao, Tai, Lu, Zhu, Xi, Liu, Qi, Long, Shibing, Liu, Ming

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 462 KB

english, 2018

8

Investigation of Retention Behavior of TiOₓ/Al₂O₃ Resistive Memory and Its Failure Mechanism Based on Meyer-Neldel Rule

Banerjee, Writam, Lu, Nianduan, Yang, Yang, Li, Ling, Lv, Hangbing, Liu, Qi, Long, Shibing, Liu, Ming

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.93 MB

english, 2018

9

Thermoelectric Seebeck effect in oxide-based resistive switching memory

Wang, Ming, Bi, Chong, Li, Ling, Long, Shibing, Liu, Qi, Lv, Hangbing, Lu, Nianduan, Sun, Pengxiao, Liu, Ming

Journal:

Nature Communications

Year:

2014

Language:

english

File:

PDF, 546 KB

english, 2014

10

[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - Complementary Memory Cell Based on Field-Programmable Ferroelectric Diode for Ultra-Low Power Current-SA Free BNN Applications

Luo, Qing, Gong, Tiancheng, Xu, Xiaoxin, Yuan, Peng, Li, Xiaoyan, Tai, Lu, Liu, Qi, Lv, Hangbing, Liu, Ming, Chen, Bing, Cao, Rongrong, Xue, Xiaoyong, Zhou, Keji, Yang, Jianguo, Zheng, Xu, Yu, Haoran,

Year:

2019

Language:

english

File:

PDF, 3.84 MB

english, 2019

11

OxideâBased ElectrolyteâGated Transistors for Spatiotemporal Information Processing

Li, Yue, Lu, Jikai, Shang, Dashan, Liu, Qi, Wu, Shuyu, Wu, Zuheng, Zhang, Xumeng, Yang, Jianguo, Wang, Zhongrui, Lv, Hangbing, Liu, Ming

Journal:

Advanced Materials

Year:

2020

File:

PDF, 1.66 MB

2020

12

[IEEE 2015 IEEE International Memory Workshop (IMW) - Monterey, CA, USA (2015.5.17-2015.5.20)] 2015 IEEE International Memory Workshop (IMW) - A Novel Approach to Identify the Carrier Transport Path and Its Correlation to the Current Variation in RRAM

Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming

Year:

2015

Language:

english

File:

PDF, 1.12 MB

english, 2015

13

Improving the electrical performance of resistive switching memory using doping technology

Yan Wang, Qi Liu, HangBing Lü, ShiBing Long, Wei Wang, YingTao Li, Sen Zhang, WenTai Lian, JianHong Yang, Ming Liu

Journal:

Chinese Science Bulletin

Year:

2012

Language:

english

File:

PDF, 683 KB

english, 2012

14

Operation methods of resistive random access memory

Wang, GuoMing, Long, ShiBing, Zhang, MeiYun, Li, Yang, Xu, XiaoXin, Liu, HongTao, Wang, Ming, Sun, PengXiao, Sun, HaiTao, Liu, Qi, Lü, HangBing, Yang, BaoHe, Liu, Ming

Journal:

Science China Technological Sciences

Year:

2014

Language:

english

File:

PDF, 1.15 MB

english, 2014

15

Retraction: High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory

Banerjee, Writam, Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming

Journal:

Year:

2015

Language:

english

File:

PDF, 118 KB

english, 2015

16

Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory

Liu, Sen, Lu, Nianduan, Zhao, Xiaolong, Xu, Hui, Banerjee, Writam, Lv, Hangbing, Long, Shibing, Li, Qingjiang, Liu, Qi, Liu, Ming

Journal:

Advanced Materials

Year:

2016

Language:

english

File:

PDF, 3.05 MB

english, 2016

17

[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Uniformity and Endurance Enhancement of Valance Changed Resistive Switching Memory (VCM) by a New Pulse Method

Yu, Jie, Xu, Xiaoxin, Gong, Tiancheng, Luo, Qing, Tai, Lu, Li, Xiaoyan, Yuan, Peng, Dong, Danian, Yin, Jiahao, Ding, Qingting, Lv, Hangbing, Liu, Ming

Year:

2019

File:

PDF, 487 KB

2019

18

Progress in rectifying-based RRAM passive crossbar array

KangWei Zhang, ShiBing Long, Qi Liu, HangBing Lü, YingTao Li, Yan Wang, WenTai Lian, Ming Wang, Sen Zhang, Ming Liu

Journal:

Science China Technological Sciences

Year:

2011

Language:

english

File:

PDF, 884 KB

english, 2011

19

A novel method of identifying the carrier transport path in metal oxide resistive random access memory

Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming

Journal:

Journal of Physics D Applied Physics

Year:

2015

Language:

english

File:

PDF, 1.06 MB

english, 2015

20

Thermal effect on endurance performance of 3-dimensional RRAM crossbar array

Lu, Nianduan, Sun, Pengxiao, Li, Ling, Liu, Qi, Long, Shibing, Hangbing, Lv, Liu, Ming

Journal:

Chinese Physics B

Year:

2016

Language:

english

File:

PDF, 1.69 MB

english, 2016

21

Thermal crosstalk in 3-dimensional RRAM crossbar array

Sun, Pengxiao, Lu, Nianduan, Li, Ling, Li, Yingtao, Wang, Hong, Lv, Hangbing, Liu, Qi, Long, Shibing, Liu, Su, Liu, Ming

Journal:

Scientific Reports

Year:

2015

Language:

english

File:

PDF, 1.37 MB

english, 2015

22

[IEEE 2018 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2018.12.1-2018.12.5)] 2018 IEEE International Electron Devices Meeting (IEDM) - 40× Retention Improvement by Eliminating Resistance Relaxation with High Temperature Forming in 28 nm RRAM Chip

Xu, Xiaoxin, Tai, Lu, Gong, Tiancheng, Yin, Jiahao, Huang, Peng, Yu, Jie, Dong, Da Nian, Luo, Qing, Liu, Jing, Yu, Zhaoan, Zhu, Xi, Wu, Xiu Long, Liu, Qi, LV, Hangbing, Liu, Ming

Year:

2018

File:

PDF, 1.17 MB

2018

23

An overview of the switching parameter variation of RRAM

Zhang, Meiyun, Long, Shibing, Wang, Guoming, Li, Yang, Xu, Xiaoxin, Liu, Hongtao, Liu, Ruoyu, Wang, Ming, Li, Congfei, Sun, Pengxiao, Sun, Haitao, Liu, Qi, Lü, Hangbing, Liu, Ming

Journal:

Chinese Science Bulletin

Year:

2014

Language:

english

File:

PDF, 1.26 MB

english, 2014

24

[IEEE 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT) - Guilin, China (2014.10.28-2014.10.31)] 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Physical model of electroforming mechanism in oxide-based resistive switching devices (RRAM)

Sun, Pengxiao, Li, Ling, Lu, Nianduan, Lv, Hangbing, Liu, Su, Liu, Ming

Year:

2014

Language:

english

File:

PDF, 1.16 MB

english, 2014

25

WakeâUp Effect in HfO 2 âBased Ferroelectric Films

Jiang, Pengfei, Luo, Qing, Xu, Xiaoxin, Gong, Tiancheng, Yuan, Peng, Wang, Yuan, Gao, Zhaomeng, Wei, Wei, Tai, Lu, Lv, Hangbing

Journal:

Advanced Electronic Materials

Year:

2020

File:

PDF, 2.82 MB

2020

26

Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory

Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Banerjee, Writam, Liu, Ming

Journal:

Materials Research Express

Year:

2015

Language:

english

File:

PDF, 1.92 MB

english, 2015

27

A Self-Rectifying Resistive Switching Device Based on HfO₂/TaOₓ Bilayer Structure

Ma, Haili, Zhang, Xumeng, Wu, Facai, Luo, Qing, Gong, Tiancheng, Yuan, Peng, Xu, Xiaoxin, Liu, Yu, Zhao, Shengjie, Zhang, Kaiping, Lu, Cheng, Zhang, Peiwen, Feng, Jie, Lv, Hangbing, Liu, Ming

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.86 MB

english, 2018

28

Amorphous Gallium Oxide‐Based Gate‐Tunable High‐Performance Thin Film Phototransistor for Solar‐Blind Imaging

Qin, Yuan, Long, Shibing, He, Qiming, Dong, Hang, Jian, Guangzhong, Zhang, Ying, Hou, Xiaohu, Tan, Pengju, Zhang, Zhongfang, Lu, Yingjie, Shan, Chongxin, Wang, Jianlu, Hu, Weida, Lv, Hangbing, Liu, Qi

Journal:

Advanced Electronic Materials

Year:

2019

Language:

english

File:

PDF, 1.85 MB

english, 2019

29

Classification of three-level Random Telegraph Noise and Its application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory

Gong, Tiancheng, Luo, Qing, Xu, Xiaoxin, Yu, Jie, Dong, Danian, Lv, Hangbing, Yuan, Peng, Chen, Chuanbing, Yin, Jiahao, Tai, Lu, Zhu, Xi, Liu, Qi, Long, Shibing, Liu, Ming

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 367 KB

english, 2018

30

Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure

Yu, Jie, Xu, Xiaoxin, Gong, Tiancheng, Luo, Qing, Dong, Danian, Yuan, Peng, Tai, Lu, Yin, Jiahao, Zhu, Xi, Wu, Xiulong, Lv, Hangbing, Liu, Ming

Journal:

Nanoscale Research Letters

Year:

2019

Language:

english

File:

PDF, 2.41 MB

english, 2019

31

An overview of resistive random access memory devices

YingTao Li, ShiBing Long, Qi Liu, HangBing Lü, Su Liu, Ming Liu

Journal:

Chinese Science Bulletin

Year:

2011

Language:

english

File:

PDF, 832 KB

english, 2011

32

Memory Devices: Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory (Adv. Mater. 48/2016)

Liu, Sen, Lu, Nianduan, Zhao, Xiaolong, Xu, Hui, Banerjee, Writam, Lv, Hangbing, Long, Shibing, Li, Qingjiang, Liu, Qi, Liu, Ming

Journal:

Advanced Materials

Year:

2016

File:

PDF, 5.00 MB

2016

33

[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Fully BEOL compatible TaOx-based selector with high uniformity and robust performance

Luo, Qing, Xu, Xiaoxin, Lv, Hangbing, Gong, Tiancheng, Long, Shibing, Liu, Qi, Sun, Haitao, Li, Ling, Lu, Nianduan, Liu, Ming

Year:

2016

Language:

english

File:

PDF, 2.74 MB

english, 2016

34

Retracted Article: High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory

Banerjee, Writam, Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming

Journal:

Year:

2015

Language:

english

File:

PDF, 993 KB

english, 2015

35

[IEEE 2018 IEEE International Memory Workshop (IMW) - Kyoto (2018.5.13-2018.5.16)] 2018 IEEE International Memory Workshop (IMW) - Switching and Failure Mechanism of Self-Selective Cell in 3D VRRAM by RTN-Based Defect Tracking Technique

Gong, Tiancheng, Luo, Qing, Lv, Hangbing, Xu, Xiaoxin, Yu, Jie, Yuan, Peng, Dong, Danian, Chen, Chuanbing, Yin, Jiahao, Tai, Lu, Zhu, Xi, Long, Shibing, Liu, Qi, Liu, Ming

Year:

2018

Language:

english

File:

PDF, 3.30 MB

english, 2018

36

[IEEE 2015 28th International Vacuum Nanoelectronics Conference (IVNC) - Guangzhou, China (2015.7.13-2015.7.17)] 2015 28th International Vacuum Nanoelectronics Conference (IVNC) - Analysis of the temperature dependent contact resistance in amorphous InGaZnO thin film transistors

Wei Wang,, Ling Li,, Zhuoyu Ji,, Congyan Lu,, Yu Liu,, Hangbing Lv,, Guangwei Xu,, Ming Liu,

Year:

2015

Language:

english

File:

PDF, 1003 KB

english, 2015

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